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NE3517S03 - K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

Description

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Features

  • Super low noise figure, high associated gain NF = 0.7 dB TYP. , Ga = 13.5 dB TYP. @ f = 20 GHz.
  • K-band Micro-X plastic (S03) package.

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Datasheet Details

Part number NE3517S03
Manufacturer Renesas
File Size 225.71 KB
Description K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Datasheet download datasheet NE3517S03 Datasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Free Datasheet http://www.datasheet4u.com/ Notice 1. All information included in this document is current as of the date this document is issued.
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