Part number:
NE3519M04
Manufacturer:
File Size:
244.84 KB
Description:
N-channel gaas hj-fet.
* R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier
* Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
* Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS
* Satellite radio (SDARS, etc.)
NE3519M04 Datasheet (244.84 KB)
NE3519M04
244.84 KB
N-channel gaas hj-fet.
📁 Related Datasheet
NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3513M04 N-Channel GaAs HJ-FET (Renesas)
NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3516S02 N-Channel GaAs HJ-FET (Renesas)
NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET (Renesas)
NE350184C HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
NE3505M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)