• Part: NE3519M04
  • Description: N-channel GaAs HJ-FET
  • Manufacturer: Renesas
  • Size: 244.84 KB
NE3519M04 Datasheet (PDF) Download
Renesas
NE3519M04

Key Features

  • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
  • Flat-lead 4-pin thin-type super minimold (M04) package

Applications

  • Low noise amplifier for microwave munication system