- Part: NE3519M04
- Description: N-channel GaAs HJ-FET
- Manufacturer: Renesas
- Size: 244.84 KB
Key Features
- Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
- Flat-lead 4-pin thin-type super minimold (M04) package
Applications
- Low noise amplifier for microwave munication system