Datasheet4U Logo Datasheet4U.com

NE3521M04 Datasheet - Renesas

N-Channel GaAs HJ-FET

NE3521M04 Features

* R09DS0058EJ0100 Rev.1.00 Mar 19, 2013

* Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)

* Flat-lead 4-pin thin-type super minimol

NE3521M04 General Description

Summary First edition issued Rev. 1.00 Date Mar 19, 2013 Page - All trademarks and registered trademarks are the property of their respective owners. C-1 Free Datasheet http://www.datasheet4u.com/ Notice 1. Descriptions of circuits, software and other related information in this document are pr.

NE3521M04 Datasheet (431.07 KB)

Preview of NE3521M04 PDF

Datasheet Details

Part number:

NE3521M04

Manufacturer:

Renesas ↗

File Size:

431.07 KB

Description:

N-channel gaas hj-fet.

📁 Related Datasheet

NE3520S03 N-Channel GaAs HJ-FET (Renesas)

NE350184C HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)

NE3505M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3508M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3513M04 N-Channel GaAs HJ-FET (Renesas)

TAGS

NE3521M04 N-Channel GaAs HJ-FET Renesas

Image Gallery

NE3521M04 Datasheet Preview Page 2 NE3521M04 Datasheet Preview Page 3

NE3521M04 Distributor