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NE5550279A - Silicon Power LDMOS FET

Renesas

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Datasheet Details

Part number	NE5550279A
Manufacturer	Renesas ↗
File Size	382.36 KB
Description	Silicon Power LDMOS FET
Datasheet	NE5550279A_Renesas.pdf

NE5550279A Product details

Features

High Output Power.
High power added efficiency.
High Linear gain.
High ESD tolerance : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm).
Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Published: Nov 10, 2013 |