Part NE5550279A
Description Silicon Power LDMOS FET
Manufacturer Renesas
Size 382.36 KB
Renesas
NE5550279A

Overview

  • High Output Power
  • High power added efficiency
  • High Linear gain
  • High ESD tolerance : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.