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Renesas Electronics Components Datasheet

NE5550279A Datasheet

Silicon Power LDMOS FET

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NE5550279A
Silicon Power LDMOS FET
Data Sheet
R09DS0033EJ0100
Rev.1.00
Mar 28, 2012
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550279A
Order Number
NE5550279A-A
Package
79A
(Pb Free)
Marking
W7
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550279A-T1 NE5550279A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550279A-T1A NE5550279A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550279A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
6.25
150
55 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

NE5550279A Datasheet

Silicon Power LDMOS FET

No Preview Available !

NE5550279A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
0.4
15
MAX.
9.0
2.85
20
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Note: Pin = 0 dBm
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note
Test Conditions
VGS = 6.0 V
VDS = 25 V
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 100±100 mA
Channel to Case
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
MIN.
1.15
25
1.8
31.5
TYP. MAX.
100
10
1.65 2.25
38
2.2 2.9
20.0
33.0
0.38
70
68
22.5
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number NE5550279A
Description Silicon Power LDMOS FET
Maker Renesas
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