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NE5550979A - Silicon Power LDMOS FET

Features

  • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
  • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge).
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Datasheet preview – NE5550979A

Datasheet Details

Part number NE5550979A
Manufacturer Renesas Electronics
File Size 802.93 KB
Description Silicon Power LDMOS FET
Datasheet download datasheet NE5550979A Datasheet
Additional preview pages of the NE5550979A datasheet.

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Full PDF Text Transcription

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge) • Suitable for VHF to UHF-BAND Class-AB power amplifier.
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