Part NE5550979A
Description Silicon Power LDMOS FET
Manufacturer Renesas
Size 802.93 KB
Renesas
NE5550979A

Overview

  • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
  • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
  • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.