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NE5550979A - Silicon Power LDMOS FET

Renesas

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Datasheet Details

Part number	NE5550979A
Manufacturer	Renesas ↗
File Size	802.93 KB
Description	Silicon Power LDMOS FET
Datasheet	NE5550979A_Renesas.pdf

NE5550979A Product details

Features

High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge).
Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Published: Nov 10, 2013 |