900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

NE5550979A Datasheet

Silicon Power LDMOS FET

No Preview Available !

NE5550979A
Silicon Power LDMOS FET
Data Sheet
R09DS0031EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550979A
Order Number
NE5550979A-A
Package
79A
(Pb Free)
Marking
W6
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550979A-T1 NE5550979A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550979A-T1A NE5550979A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550979A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
Ptot
Tch
Tstg
Ratings
30
6.0
3.0
25
150
55 to +150
Unit
V
V
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 11
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

NE5550979A Datasheet

Silicon Power LDMOS FET

No Preview Available !

NE5550979A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
1.7
25
MAX.
9.0
2.85
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Note 1 : Pin = 10 dBm
Note 2 : Pin = 5 dBm
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note 1
Pout
IDS
ηd
ηadd
GL Note 2
Pout
IDS
ηd
ηadd
GL Note 1
Test Conditions
VGS = 6.0 V
VDS = 25 V
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 700±100 mA
Channel to Case
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 200 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 200 mA (RF OFF)
MIN.
1.15
25
1.8
38.5
TYP. MAX.
100
10
1.65 2.25
37
2.2 2.9
5.0
39.5
1.70
68
66
22.0
39.6
1.60
75
73
25.0
38.6
1.76
55
52
16.0
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 11
Free Datasheet http://www.datasheet4u.com/


Part Number NE5550979A
Description Silicon Power LDMOS FET
Maker Renesas
Total Page 13 Pages
PDF Download

NE5550979A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 NE5550979A Silicon Power LDMOS FET
Renesas





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy