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NE5550979A Datasheet Silicon Power Ldmos Fet

Manufacturer: Renesas

Overview: Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.

Key Features

  • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
  • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge).
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

NE5550979A Distributor

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