* Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number NE85633 2SC3356 NE85633-T1B 2SC3356-T1B Order Number Package NE85633-A 2
NE85633
1.44 MB
Npn silicon rf transistor.
A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.0.
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