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NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR

General Description

The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current rating: ID(DC) = ±100 A.
  • Designed for automotive.

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Datasheet Details

Part number NP100N04NUJ
Manufacturer Renesas
File Size 211.19 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP100N04NUJ Datasheet

Full PDF Text Transcription for NP100N04NUJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP100N04NUJ. For precise diagrams, and layout, please refer to the original PDF.

NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor ...

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Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID(DC) = ±100 A • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP100N04NUJ–S18-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-262 (MP-25SK) TYP. 1.

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