NP100N04NUJ transistor equivalent, mos field effect transistor.
* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
* High current rating:.
Features
* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 560.
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, V.
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