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NP109N055PUK - MOS FIELD EFFECT TRANSISTOR

General Description

The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A).
  • Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription for NP109N055PUK (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP109N055PUK. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Data Sheet NP109N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0590EJ0100 Rev.1.00 Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transisto...

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1 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.

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