NP110N04PDG Datasheet N-channel Power Mos Fet

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS.

Datasheet Details

Part number	NP110N04PDG
Manufacturer	Renesas
File Size	165.43 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP110N04PDG-Renesas.pdf

General Description

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ.

1.5 g

Key Features

Channel temperature 175 degree rating.
Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263).

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