MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The NP110N055PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low Ciss: Ciss = 17100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Tstg −55 to +175
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
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Document No. D16853EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan