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NP110N055PUG - N-CHANNEL POWER MOS FET

Description

The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A).
  • Low Ciss: Ciss = 17100 pF TYP.

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Datasheet preview – NP110N055PUG

Datasheet Details

Part number NP110N055PUG
Manufacturer Renesas
File Size 190.23 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP110N055PUG Datasheet
Additional preview pages of the NP110N055PUG datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP110N055PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.
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