NP160N04TUJ transistor equivalent, mos field effect transistor.
* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
* Designed for automotive ap.
Features
* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF T.
Image gallery
Download