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NP161N04TUG - N-CHANNEL POWER MOS FET

General Description

The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A).
  • High Current Rating ID(DC) = ±160 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note NP161N04TUG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel Note Pb-free (This product does not contain Pb in the external electrode). PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX.