NP16N06QLK Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
NP16N06QLK Key Features
- Super low on-state resistance RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID =
- Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual