NP180N04TUJ Datasheet, Renesas

* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
* Designed for automotive application a.

Features
* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF T.

The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
* D.