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NP20N10YDF - N-Channel MOSFET

General Description

The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A).
  • Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Logic level drive type.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet NP20N10YDF MOS FIELD EFFECT TRANSISTOR R07DS0705EJ0100 Rev.1.00 Apr 17, 2012 Description The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)  Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.