NP29N06QDK Datasheet, Renesas

* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)
* Low Ciss: Ciss = 1000 pF TYP. .

Features
* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (V.

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A.