* Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)
* Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified
* Small size package 8-pin HSON dual Outline R
NP29N06QDK Datasheet (467.17 KB)
NP29N06QDK
467.17 KB
Dual n-channel power mosfet.
Data Sheet NP29N06QDK 60 V 30 A Dual N-channel Power MOS FET Application: Automotive R07DS1330EJ0200 Rev.2.00 May 24, 2018 Desc.
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