* Super low on-state resistance RDS(on) = 21 m MAX. (VGS = 10 V, ID = 15 A)
* Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified
* Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this d
NP29N06QUK Datasheet (469.43 KB)
NP29N06QUK
469.43 KB
Dual n-channel power mosfet.
NP29N06QUK 60 V 30 A Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1331EJ0200 Rev.2.00 May 24, 2018 Descr.
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