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NP30N06QDK - Dual N-channel Power MOSFET

General Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance  RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A).
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Datasheet Details

Part number NP30N06QDK
Manufacturer Renesas
File Size 479.78 KB
Description Dual N-channel Power MOSFET
Datasheet download datasheet NP30N06QDK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet NP30N06QDK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive R07DS1332EJ0200 Rev.2.00 May 24, 2018 Description NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A)  Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified  Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.