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NP33N075YDF Datasheet

MOS FIELD EFFECT TRANSISTOR

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NP33N075YDF
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0363EJ0100
Rev.1.00
Jun 30, 2011
Description
The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 28 mΩ MAX. (VGS = 10 V, ID = 17 A)
Low Ciss: Ciss = 1300 pF TYP. (VDS = 25 V, VGS = 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
Ordering Information
Part No.
NP33N075YDF-E1-AY 1
NP33N075YDF-E2-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
75
±20
±33
±66
92
1.0
175
55 to +175
21
44
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance 2
Rth(ch-C)
Rth(ch-A)
1.63
150
°C/W
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)
3. Tch(peak) 150°C, RG = 25 Ω
R07DS0363EJ0100 Rev.1.00
Jun 30, 2011
Page 1 of 6


Renesas Electronics Components Datasheet

NP33N075YDF Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

NP33N075YDF
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.5
15
TYP.
2.0
30
23
25
26
1300
150
60
15
4
45
6
28
5
7
0.9
40
61
MAX.
1
±100
2.5
28
32
35
2000
200
110
30
10
90
15
42
1.5
Chapter Title
Unit
μA
nA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 75 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 17 A
VGS = 10 V, ID = 17 A
VGS = 5 V, ID = 17 A
VGS = 4.5 V, ID = 17 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 38 V, ID = 17 A,
VGS = 10 V,
RG = 0 Ω
VDD = 60 V,
VGS = 10 V,
ID = 33 A
IF = 33 A, VGS = 0 V
IF = 33 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0363EJ0100 Rev.1.00
Jun 30, 2011
Page 2 of 6


Part Number NP33N075YDF
Description MOS FIELD EFFECT TRANSISTOR
Maker Renesas
Total Page 8 Pages
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