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NP60N03SUG - N-CHANNEL POWER MOS FET

Datasheet Summary

Description

The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A).
  • High current rating ID(DC) = ±60 A.
  • Low input capacitance Ciss = 5000 pF TYP.
  • Designed for automotive.

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Datasheet preview – NP60N03SUG

Datasheet Details

Part number NP60N03SUG
Manufacturer Renesas
File Size 239.77 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP60N03SUG Datasheet
Additional preview pages of the NP60N03SUG datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N03SUG-E1-AY Note NP60N03SUG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A) • High current rating ID(DC) = ±60 A • Low input capacitance Ciss = 5000 pF TYP.
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