NP60N055NUK transistor equivalent, mos field effect transistor.
* Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)
* Designed for automotive applicati.
Features
* Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 2500 .
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