MOS FIELD EFFECT TRANSISTOR
NP80N04MDG, NP80N04NDG, NP80N04PDG
N-CHANNEL POWER MOS FET
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
Pure Sn (Tin)
Note Pb-free (This product does not contain Pb in the external electrode.)
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
• Logic level
• Super low on-state resistance
- NP80N04MDG, NP80N04NDG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19795EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan