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Renesas Electronics Components Datasheet

NP80N04MDG Datasheet

N-CHANNEL POWER MOS FET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MDG, NP80N04NDG, NP80N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04MDG-S18-AY Note
NP80N04NDG-S18-AY Note
NP80N04PDG-E1B-AY Note
NP80N04PDG-E2B-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
Logic level
Super low on-state resistance
- NP80N04MDG, NP80N04NDG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
High current rating
ID(DC) = ±80 A
Low input capacitance
Ciss = 4600 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19795EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009


Renesas Electronics Components Datasheet

NP80N04MDG Datasheet

N-CHANNEL POWER MOS FET

No Preview Available !

NP80N04MDG, NP80N04NDG, NP80N04PDG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±80
±300
115
1.8
175
55 to +175
37
137
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.30
83.3
°C/W
°C/W
2 Data Sheet D19795EJ1V0DS


Part Number NP80N04MDG
Description N-CHANNEL POWER MOS FET
Maker Renesas
Total Page 10 Pages
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