NP89N055PUK Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

* Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A)

* Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP89N055PUK-E1-AY

* 1 NP89N055PUK-E2-AY

* 1 Lead Plating Pure Sn

NP89N055PUK

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Mos field effect transistor.

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NP89N055PUK MOS FIELD EFFECT TRANSISTOR Renesas

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