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NP90N04MUG - N-CHANNEL POWER MOS FET

General Description

The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Note Pb-free (This product does not contain Pb in the external electrode).

Key Features

  • Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A).
  • Channel temperature 175 degree rated (TO-220).

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Datasheet Details

Part number NP90N04MUG
Manufacturer Renesas
File Size 261.74 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP90N04MUG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP90N04MUG-S18-AY Note Pure Sn (Tin) Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode). PACKAGE TO-220 (MP-25K) typ. 1.9 g FEATURES • Super low on-state resistance RDS(on) = 3.0 mΩ MAX.