NP90N055MUK - MOS FIELD EFFECT TRANSISTOR

Renesas

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A).
Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V).
Designed for automotive.

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NP90N055MUK mos field effect transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	NP90N055MUK
Manufacturer	Renesas
File Size	106.36 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP90N055MUK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.