* Super low on-state resistance ⎯ RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Outline Drain Gate Body Diode Source TO-252(MP-3ZP) Equivalent circuit Remark: Stro
NP90N06VDK Datasheet (312.78 KB)
NP90N06VDK
312.78 KB
N-channel mosfet.
NP90N06VDK 60 V 90 A N-channel Power MOS FET Application: Automotive Data Sheet R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Descriptio.
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