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PF08127B - MOS FET Power Amplifier Module

Key Features

  • All in one including output matching circuit.
  • Simple external circuit.
  • Simple power control.
  • High gain 3stage amplifier : 0 dBm input Typ.
  • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max.
  • High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 Pin Arrangement.
  • RF-Q-8 8 7G6 5 1 2G3 4 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DC.

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Datasheet Details

Part number PF08127B
Manufacturer Renesas
File Size 161.25 KB
Description MOS FET Power Amplifier Module
Datasheet download datasheet PF08127B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PF08127B MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone ADE-208-1606 (Z) Rev.0 Oct. 2002 Application • Triple band amplifier for E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). • For 3.5 V & GPRS Class12 operation compatible Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.