R1LV0408CSP-5SI Datasheet - Renesas

Wide Temperature Range Version 4M SRAM

R1LV0408CSP-5SI Features

* Single 3 V supply: 2.7 V to 3.6 V

* Access time: 55/70 ns (max)

* Power dissipation:  Active: 6 mW/MHz (typ)  Standby: 1.5 µW (typ)

* Completely static memory.  No clock or timing strobe required

* Equal access and cycle times

* Common data input

R1LV0408CSP-5SI General Description

The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power dissipation; therefo.

R1LV0408CSP-5SI Datasheet (81.00 KB)