R1LV0416DBG-5SI Datasheet - Renesas

4M SRAM

R1LV0416DBG-5SI Features

* Single 3.0 V supply: 2.7 V to 3.6 V

* Fast access time: 55/70 ns (max)

* Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V)

* Equal access and cycle times

* Common data input and output.  Three state output

* Battery backup operation.  2 chip s

R1LV0416DBG-5SI General Description

The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; t.

R1LV0416DBG-5SI Datasheet (151.57 KB)