R1QEA3636CBG, R1QBA3636CBG Datasheet - Renesas

R1QEA3636CBG 36-Mbit DDRII+ SRAM

The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All inp.

R1QEA3636CBG Features

* ႑ Power Supply

* 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock

* Fast clock cycle time for high bandwidth

* Two input clocks (K and /K) for precise DDR timing at clock rising edges only

* Two output echo clocks (CQ and /CQ) simplify data capture in high-sp

R1QBA3636CBG-Renesas.pdf