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RBN50H65T1FPQ-A0 - IGBT

Key Features

  • Trench gate and thin wafer technology (G8H series).
  • High speed switching.
  • Built in fast recovery diode in one package.
  • Non-specification for short circuit.
  • Low collector to emitter saturation voltage.

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Datasheet RBN50H65T1FPQ-A0 650V - 50A - IGBT Power Switching R07DS1381EJ0120 Rev.1.20 Aug.03.2020 Features  Trench gate and thin wafer technology (G8H series)  High speed switching  Built in fast recovery diode in one package  Non-specification for short circuit  Low collector to emitter saturation voltage  Applications: UPS, Welding, photovoltaic VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system  Quality grade: Standard Key Performance Type RBN50H65T1FPQ-A0 VCES 650 V IC 50 A VCE(sat), TC=25°C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E R07DS1381EJ0120 Rev.1.20 Aug.03.