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RJE0620JPD - P-Channel Thermal FET

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • High density mounting.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 compliant Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJE0620JPD –60V, –10A, P Channel Thermal FET Power Switching Data Sheet R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  High density mounting  Power supply voltage applies 12 V and 24 V.