RJF0408JPD Overview
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.
Key Features
- Logic level operation (4 V Gate drive)
- Built-in the over temperature shut-down circuit
- High endurance capability against to the short circuit
- Latch type shut down operation (need 0 voltage recovery)
- Built-in the current limitation circuit
- Power supply voltage applies 12 V
- AEC-Q101 Compliant
