RJF0408JPD
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
- Logic level operation (4 V Gate drive).
- Built-in the over temperature shut-down circuit.
- High endurance capability against to the short circuit.
- Latch type shut down operation (need 0 voltage recovery).
- Built-in the current limitation circuit.
- Power supply voltage applies 12 V.
- AEC-Q101 pliant.
- Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
1 2 3
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Current Limitation Circuit
Gate Shut-down Circuit
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source...
