RJF0408JPD fet equivalent, silicon n-channel fet.
* Logic level operation (4 V Gate drive).
* Built-in the over temperature shut-down circuit.
* High endurance capability against to the short circuit.
* L.
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high juncti.
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