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RJF0622JSP
60V, 3A N Channel Thermal FET Power Switching
Target Specifications Datasheet
R07DS1418EJ0100 Rev.1.00
Jun 04, 2018
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation. Built-in the over temperature shut-down circuit and current limitation circuit. High endurance capability against to the short circuit. Temperature hysteresis type. High density mounting Power supply voltage applies 12 V and 24 V.