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Renesas Electronics Components Datasheet

RJG0601JSP Datasheet

Dual-Channel FET

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Preliminary Datasheet
RJG0601JSP
±60V, ±1.5A, N Channel, P Channel
Thermal FET Power Switching
R07DS1213EJ0200
Rev.2.00
Nov 01, 2016
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V.
AEC-Q101 Compliant
2 Operations on N Channel, P Channel Thermal FET.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
87 65
78
1 234
2
Gate Resistor
Current
Limitation
4
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
MOS1 (N Channel)
1
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
MOS2 (P Channel)
56
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
3
Absolute Maximum Ratings
Item
Symbol
Ratings Nch.
Ratings Pch.
Drain to source voltage
VDSS
60
–60
Gate to source voltage
VGSS
16
–16
VGSS
–2.5
2.5
Drain current
ID Note4
1.5
–1.5
Body-drain diode reverse drain current
IDR
1.5
–1.5
Avalanche current
IAP Note 3
1.5
–1.5
Avalanche energy
EAR Note 3
9.6
9.6
Channel dissipation
Pch Note 1
2
2
Channel dissipation
Pch Note 2
1.5
1.5
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. Tch = 25C, Rg 50
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
Page 1 of 12


Renesas Electronics Components Datasheet

RJG0601JSP Datasheet

Dual-Channel FET

No Preview Available !

RJG0601JSP
Preliminary
Typical Operation Characteristics N Channel
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 5. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
3.5
1.5
Typ
0.8
0.35
0.8
0.35
175
Max
1.2
1
12
5.6
Unit
V
V
mA
mA
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V Note 5
Electrical Characteristics N Channel
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
ID1
ID2
ID3
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
Min
1.5
60
16
–2.5
Typ
0.8
0.35
Max
Unit
5.4
A
10
mA
5.6
A
V
V
V
100
A
50
A
1
A
–100
A
mA
mA
10
A
Gate to source cutoff voltage
VGS(off)
1.1
2.1
V
Static drain to source on state
resistance
RDS(on)
RDS(on)
208
350
m
142
263
m
Output capacitance
Coss
265
pF
Turn-on delay time
td(on)
0.55
s
Rise time
tr
1.88
s
Turn-off delay time
td(off)
3.9
s
Fall time
tf
3.7
s
Body-drain diode forward voltage
VDF
0.82
V
Body-drain diode reverse
trr
71
ns
recovery time
Over load shut down
operation time Note 7
tos
1. 17
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 10 V Note 6
VGS = 1.2 V, VDS = 10 V
VGS = 5V, VDS = 10 V Note 6
ID = 10 mA, VGS = 0
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS =– 2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0
Ta = 125C
ID = 1 mA, VDS = 10 V
ID = 0.75 A, VGS = 4 V Note 6
ID = 0.75 A, VGS = 10 V Note 6
VDS = 10 V, VGS = 0, f = 1MHz
ID= 0.75 A, VGS = 10 V
RL = 40
IF = 1.5 A, VGS = 0
IF = 1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
Page 2 of 12



Part Number RJG0601JSP
Description Dual-Channel FET
Maker Renesas
Total Page 3 Pages
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