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RJH60D3DPP-M0 Key Features

  • Short circuit withstand time (5 s typ.)
  • Low collector to emitter saturation voltage
  • Built in fast recovery diode (100 ns typ.) in one package
  • Trench gate and thin wafer technology
  • High speed switching

RJH60D3DPP-M0 Description

Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.4.00 Apr 19, 2012.