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Renesas Electronics Components Datasheet

RJH60F0DPQ-A0 Datasheet

High Speed Power Switching

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Preliminary Datasheet
RJH60F0DPQ-A0
600 V - 25 A - IGBT
High Speed Power Switching
R07DS0324EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
100
201.6
0.62
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/


Renesas Electronics Components Datasheet

RJH60F0DPQ-A0 Datasheet

High Speed Power Switching

No Preview Available !

RJH60F0DPQ-A0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode forward voltage
C-E diode reverse recovery time
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
Min
4
Typ
1.4
1.7
1550
82
26
46
92
70
90
1.2
1.5
90
Preliminary
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 25 A, VGE = 15V Note3
IC = 50 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
www.DataSheet.net/
R07DS0324EJ0200 Rev.2.00
Jul 22, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number RJH60F0DPQ-A0
Description High Speed Power Switching
Maker Renesas
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RJH60F0DPQ-A0 Datasheet PDF






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