RJH60F0DPQ-A0
Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G
- Collector
- Emitter
- Collector E 1 2
