RJH65T47DPQ-A0 - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RJH65T47DPQ-A0
Manufacturer	Renesas
File Size	259.35 KB
Description	IGBT
Datasheet	RJH65T47DPQ-A0 Datasheet
Additional preview pages of the RJH65T47DPQ-A0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology (G7H series).
High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load).
Operation frequency (20kHz ≤ f ˂ 100kHz).
Not guarantee short circuit withstand time Outline.

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Published: Jul 12, 2016 |