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RJK0628JPE - N-Channel Power MOS FET

General Description

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Key Features

  • For Automotive.

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Full PDF Text Transcription for RJK0628JPE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RJK0628JPE. For precise diagrams, and layout, please refer to the original PDF.

RJK0628JPE 60 V - 160 A - N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 2.6 m t...

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lication  AEC-Q101 compliant  Low on-resistance : RDS(on) = 2.6 m typ.  Capable of 4.5 V gate drive  Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4.

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