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RJK0654DPB - N-Channel Power MOSFET

General Description

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Key Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Full PDF Text Transcription for RJK0654DPB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RJK0654DPB. For precise diagrams, and layout, please refer to the original PDF.

RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m t...

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d switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1052EJ0200 (Previous: REJ03G1880-0100) Rev.2.

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