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Renesas Electronics Components Datasheet

RJK0822SPN Datasheet

Silicon N Channel Power MOS FET

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RJK0822SPN
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 7.9mtyp.(at VGS = 10V)
High speed switching
Low drive current
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Rev.1.00
September.26.2007
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.1.00, September.26.2007, page 1 of 7


Renesas Electronics Components Datasheet

RJK0822SPN Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

RJK0822SPN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
Ratings
80
±20
80
320
80
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00, September.26.2007, page 2 of 7



Part Number RJK0822SPN
Description Silicon N Channel Power MOS FET
Maker Renesas
Total Page 7 Pages
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