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RJK0822SPN
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V)
• High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Rev.1.00 September.26.2007
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.1.00, September.26.2007, page 1 of 7
RJK0822SPN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VGSS
ID ID(pulse)Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
RJK0822SPN Datasheet
