Silicon N Channel Power MOS FET
• Low on-resistance
RDS(on) = 7.9mΩ typ.(at VGS = 10V)
• High speed switching
• Low drive current
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.1.00, September.26.2007, page 1 of 7