RJK1211DPA Datasheet, Renesas

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 10 V)
* Pb-free
* Halog.

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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