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RJK1575DPA - MOSFET

Key Features

  • Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C).
  • Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C).
  • Low leakage current.
  • High speed switching Outline Preliminary Datasheet R07DS0858EJ0200 Rev.2.00 Jan 08, 2013.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching Features  Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)  Low leakage current  High speed switching Outline Preliminary Datasheet R07DS0858EJ0200 Rev.2.