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RJK1576DPA - MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.046  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching Outline Preliminary Datasheet R07DS0855EJ0200 Rev.2.00 Jan 10, 2013.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK1576DPA 150V - 25A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.046  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline Preliminary Datasheet R07DS0855EJ0200 Rev.2.