RJK6002DPE Key Features
- Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012
- Part: RJK6002DPE
- Description: MOS FET
- Manufacturer: Renesas
- Size: 98.22 KB
Other RJK6002DPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6002DPD | Silicon N Channel MOS FET High Speed Power Switching |