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RJK6011DJA datasheet preview
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RJK6011DJA Key Features

  • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C)
  • Low drive current
  • High density mounting

RJK6011DJA Description

RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching.