RJK6018DPM Key Features
- Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0131EJ0200 Rev.2.00 Jun 21, 2012
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6018DPK | Silicon N-Channel MOSFET |