RJK6034DPD-E0 Overview
Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching.
RJK6034DPD-E0 Key Features
- Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011