RJK6036DP3-A0 Key Features
- Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting
RJK6036DP3-A0 is High Speed Power Switching MOS FET manufactured by Renesas .
RJK6036DP3-A0 600V - 2A - MOS FET High Speed Power Switching.