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Renesas Electronics Components Datasheet

RJK60S5DPN Datasheet

High Speed Power Switching MOS FET

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RJK60S5DPN pdf
Preliminary Datasheet
RJK60S5DPN
600V - 20A - MOS FET
High Speed Power Switching
R07DS0952EJ0200
Rev.2.00
Jan 23, 2013
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
123
G
S
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
MOSFET dv/dt ruggedness
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25C, Tch 150C
3. Value at Tj = 25C, VDS 480 V
4. Value at Tc = 25C
Symbol
VDSS
VGSS
IDNote1
IDNote1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
IAPNote2
EARNote2
dv/dt Note3
Pch Note2
ch-c
Tch
Tstg
Ratings
600
+30, 20
20
12.6
40
20
40
5
1.36
150
166.6
0.75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
V/ns
W
C/W
C
C
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 1 of 7


Renesas Electronics Components Datasheet

RJK60S5DPN Datasheet

High Speed Power Switching MOS FET

No Preview Available !

RJK60S5DPN pdf
RJK60S5DPN
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on
Min
600
3
Gate resistance
Rg —
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Irr
Qrr
Typ
0.150
0.375
2.5
1600
2160
8.2
23
25
49
23
27
10.5
8.5
0.96
400
25
5.6
Max
1
±0.1
5
0.178
1.60
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = +30V, 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note5
Ta = 150°C
ID = 10 A, VGS = 10 V Note5
f = 1 MHz
VDS = 25 V, VGS = 0
VDS = 25 V
VGS = 0
f = 100kHz
ID = 10 A
VGS = 10 V
RL = 30
Rg = 10 Note5
VDD = 480 V
VGS = 10 V
ID = 20 A Note4
IF = 20 A, VGS = 0 Note5
IF = 20 A
VGS = 0
diF/dt = 100 A/s Note5
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 2 of 7


Part Number RJK60S5DPN
Description High Speed Power Switching MOS FET
Maker Renesas
Total Page 8 Pages
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RJK60S5DPN pdf
RJK60S5DPN Datasheet PDF
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